Download the IXFH10N80P datasheet PDF.
This datasheet also covers the IXFP10N80P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
z z z z
1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque TO-263 TO-220 TO-3P TO-247 (TO-220,TO-247)
300 260 1.13 / 10 2.5 3.0 5.5 6.0 Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 25
International Standard Packages Avalanche Rated Low Package Inductance Easy to Drive and to Protect
Advantages
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Easy to Mount Space Savings High Power Density
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS.
Full PDF Text Transcription for IXFH10N80P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFH10N80P. For precise diagrams, and layout, please refer to the original PDF.
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P TO-220AB (IXF...
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63 AA (IXFA) IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P TO-220AB (IXFP) VDSS ID25 trr RDS(on) = 800V = 10A ≤ 1.1Ω ≤ 250ns TO-3P (IXFQ) G S D (TAB) G DS D (TAB) G D S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 800 800 ±30 ±40 10 30 5 600 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in.
IXFH10N80P Datasheet
